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BD675A/677A/679A/681
BD675A/677A/679A/681
Medium Power Linear and Switching Applications
* Medium Power Darlington TR * Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD675A : BD677A : BD679A : BD681 : BD675A : BD677A : BD679A : BD681
1
1. Emitter
Value 45 60 80 100 45 60 80 100 5 4 6 100 40 150 - 65 ~ 150
Units V V V V V V V V V A A mA W C C
VCEO
Collector-Emitter Voltage
VEBO IC ICP IB PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25C unless otherwise noted
Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD675A : BD677A : BD679A : BD681 Collector-Base Voltage : BD675A : BD677A : BD679A : BD681 : BD675A : BD677A : BD679A : BD681 : BD675A/677A/679A : BD681 Test Condition IC = 50mA, IB = 0 Min. 45 60 80 100 200 200 200 200 500 500 500 500 2 750 750 2.8 2.5 2.5 2.5 V V V V Typ. Max. Units V V V V A A A A A A A A mA
ICBO
VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, VBE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 2A VCE = 3V, IC = 1.5A IC = 2A, IB = 40mA IC = 1.5A, IB = 30mA VCE = 3V, IC = 2A VCE = 3V, IC = 1.5A
ICEO
Collector Cut-off Current
IEBO hFE VCE(sat)
Emitter Cut-off Current * DC Current Gain
* Collector-Emitter Saturation Voltage : BD675A/677A/679A : BD681 * Base-Emitter ON Voltage : BD675A/677A/679A : BD681
VBE(on)
* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
BD675A/677A/679A/681
Typical Characteristics
10000
VCE(sat)[V], SATURATION VOLTAGE
VCE = 3V
2.4
Ic = 250 IB
2.0
hFE, DC CURRENT GAIN
1.6
1000
1.2
0.8
0.4
100 0.1
1
10
0.0 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
4.0 3.8 VCE = 3V 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
10
IC(max). Pulsed
10s
IC(max). Continuous
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
DC
100s
1
BD675A BD677A BD679A BD681
0.1 1 10
1ms
10ms
100 1000
VBE[V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
50
PC[W], POWER DISSIPATION
40
30
20
10
0 0 25 50
o
75
100
125
150
175
200
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
BD675A/677A/679A/681
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E

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